| PART |
Description |
Maker |
| HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| XC1700E XC1701LPC20C XC1701LPC20I XC1701LPD8C XC17 |
Configuration PROM.
XC1700E and XC1700L Series Configuration PROMs
IC,EPROM,128KX1,CMOS,DIP,8PIN,PLASTIC
From old datasheet system
Configuration PROMs 4M X 1 CONFIGURATION MEMORY, PQFP44
Configuration PROMs 256K X 1 CONFIGURATION MEMORY, PQCC20
|
Xilinx Inc
XILINX[Xilinx, Inc]
Xilinx, Inc.
|
| KI4920DY |
Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| KI4980DY |
Drain-Source Voltage Vds 80V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| ADM3491 ADM3491AR ADM3491AN ADM3491ARU |
3.3 V/ Full Duplex/ 840 uA 20 Mbps/ EIA RS-485 Transceiver
3.3 V, Full Duplex, 840 uA 20 Mbps, EIA RS-485 Transceiver
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:90V; Continuous Drain Current, Id:0.86A; On-Resistance, Rds(on):4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-205AD; Drain-Source Breakdown Voltage:90V RoHS Compliant: No
3.3V, Full Duplex, 840uA, 20Mbps, EIA RS-485 Transceiver
|
Analog Devices, Inc.
|
| 5N20V |
Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V
|
TY Semiconductor Co., Ltd
|
| MAGX-000035-01500P MAGX-000035-PB1PPR |
GaN on SiC D-Mode Transistor Technology Common-Source Configuration
|
M/A-COM Technology Solutions, Inc.
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| BUZ80A |
Drain source voltage
|
New Jersey Semi-Conduct...
|
| 2SK627 |
Drain Source Voltage-: VDSS= 50V(Min)
|
Inchange Semiconductor ...
|
